PART |
Description |
Maker |
UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1-Mbit (64K x 16) Static RAM 1M x 4 Static RAM x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
CAT93C46AJ CAT93C46AJI CAT93C46AJI-2.5 CAT93C46AJ- |
72-Mbit QDR-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 72-Mbit QDR-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 256K (32K x 8) Static RAM 256 Kb (256K x 1) Static RAM 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) Microwire Serial EEPROM 微型导线串行EEPROM
|
Atmel, Corp.
|
GS880E32AT-250 |
512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
GS88132BT-150IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
AS7C3256PFD18A-4TQC AS7C3256PFD16A-4TQC AS7C3256PF |
3.3V 256K x 16 pipeline burst synchronous SRAM, 150 MHz 3.3V 256K x 16 pipeline burst synchronous SRAM, 100 MHz 256K X 18 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100 256K X 16 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100 3.3V 256K x 16/18 pipeline burst synchronous SRAM 3.3V 256K x 18 pipeline burst synchronous SRAM, 166 MHz 3.3V 256K x 18 pipeline burst synchronous SRAM, 150 MHz 3.3V 256K x 18 pipeline burst synchronous SRAM, 133 MHz 3.3V 256K x 18 pipeline burst synchronous SRAM, 100 MHz 3.3V 256K x 16 pipeline burst synchronous SRAM, 133 MHz 3.3V 256K x 16 pipeline burst synchronous SRAM, 166MHz
|
Alliance Semiconductor, Corp.
|
KM41256AJ-12 KM41257AJ-12 KM41256AJ-10 KM41257AJ-1 |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode 256K × 1位动态随机存储器与页/半字节模
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
PDM41257SA7SOTY PDM41257SA7SOTR PDM41257LA7SOTY PD |
256K static RAM 256K x 1-bit x1 SRAM
|
PARADIGM
|
GS88118 GS88136 GS88118GT-11IT GS88118GT-11.5IT GS |
512K x 18, 256K x 36 ByteSafe?/a> 8Mb Sync Burst SRAMs 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs 512K x 18, 256K x 36 ByteSafe8Mb Sync Burst SRAMs 8Mb锛?12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M浣??512K x 18浣??ByteSafe??????RAM锛?甫2浣???插?????板?锛? 512K X 18 CACHE SRAM, 11.5 ns, PQFP100 TQFP-100 512K X 18 CACHE SRAM, 11 ns, PQFP100 TQFP-100 8Mb56K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位(256K x 36位)ByteSafe同步静态RAM(带2位脉冲地址计数器)) 8Mb12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M位(512K x 18位)ByteSafe同步静态RAM(带2位脉冲地址计数器))
|
GSI Technology, Inc.
|
GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 |
128K X 32 CACHE SRAM, 8 ns, PBGA119 4Mb56K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步静态RAM(带2位脉冲地址计数器)) 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI Technology
|
GS88032AT-166 GS88018AT-166 GS88036AT-166 GS88032A |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 12k × 1856K × 3256K × 36 9Mb以上同步突发静态存储器 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 12k × 18256K × 32256K × 36 9Mb以上同步突发静态存储器
|
Electronic Theatre Controls, Inc.
|
AS7C33256P AS7C33256PFD18B AS7C33256PFD18BV.1.2 AS |
3.3V 256K x 18 pipeline burst synchronous SRAM 256K X 18 STANDARD SRAM, 3.5 ns, PQFP100 3.3V 256K 】 18 pipeline burst synchronous SRAM Sync SRAM - 3.3V From old datasheet system
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|